lHeath and Stoddart have implemented a 400x400
array of NWs with density of 1011 bits/centimeter.
l“Modern DRAM circuits
have 140nm pitch wires and a memory cell size of 0.0408 mm2.”
l“Here we describe a
160,000-bit molecular electronic memory circuit, fabricated at
a density of 1011 bits cm-2 (pitch 33 nm; memory cell size 0.0011
mm2),
that is, roughly analogous to the dimensions of a DRAM circuit
projected to be available by 2020.”